BC857AQBAZ
BC857AQB/SOT8015/DFN1110D-3Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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The Nexperia BC857AQBAZ is a high-performance bipolar junction transistor (BJT) designed for demanding applications. Featuring a 45 V collector-emitter breakdown voltage and capable of handling up to 100 mA collector current, this device offers a maximum power dissipation of 340 mW. Its DFN1110D-3 surface-mount package with wettable flanks ensures robust solder joint formation. The BC857AQBAZ exhibits a minimum DC current gain (hFE) of 110 at 2 mA and 5 V, with a low collector cutoff current of 15 nA. Saturation voltage is a maximum of 400 mV at 5 mA base current and 100 mA collector current. Qualified to AEC-Q101 and designed for automotive applications, this transistor is suitable for use in advanced driver-assistance systems (ADAS), infotainment, and powertrain control modules. The component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Supplier Device Package | DFN1110D-3 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 340 mW |
| Qualification | AEC-Q101 |
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