BC856BW/DG/B3X
TRANS PNP 65V 0.1A SOT323Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia BC856BW-DG-B3X is a PNP bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 65V and a maximum continuous collector current of 100mA. It offers a transition frequency of 100MHz and a maximum power dissipation of 200mW at 150°C junction temperature. The device is housed in an SC-70, SOT-323 package and is supplied on tape and reel. Key electrical characteristics include a minimum DC current gain (hFE) of 220 at 2mA and 5V, and a Vce(sat) of 600mV at 5mA and 100mA. Collector cutoff current is specified at a maximum of 15nA (ICBO). This transistor finds application in various electronic circuits across industries such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-323 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 200 mW |
| Qualification | - |
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