BC856BW/DG/B2,115
TRANS PNP 65V 0.1A SOT323Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia BC856BW-DG-B2-115 is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage (Vce) of 65V and a maximum continuous collector current (Ic) of 100mA. It offers a minimum DC current gain (hFE) of 220 at 2mA and 5V, with a transition frequency of 100MHz. The device is rated for a maximum power dissipation of 200mW at an operating junction temperature of 150°C. The collector cutoff current (Icbo) is specified at a maximum of 15nA. This transistor is supplied in a SOT-323 package, also identified as SC-70, and is delivered on tape and reel. The BC856BW-DG-B2-115 is utilized in various applications including general-purpose amplification and switching circuits across industries such as consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-323 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 200 mW |
| Qualification | - |
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