BC856B/DG/B3,215

TRANS PNP 65V 0.1A TO236AB

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Nexperia USA Inc. BC856B-DG-B3-215 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 65 V and a continuous collector current capability of 100 mA. The transistor exhibits a minimum DC current gain (hFE) of 125 at 2 mA collector current and 5 V collector-emitter voltage, with a transition frequency of 100 MHz. It is housed in a TO-236AB (SC-59) surface-mount package, delivering a maximum power dissipation of 250 mW. The device operates at temperatures up to 150°C (TJ) and is supplied in tape and reel packaging. This component finds application in industries such as consumer electronics, industrial automation, and automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount
Transistor Type	PNP
Operating Temperature	150°C (TJ)
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	125 @ 2mA, 5V
Frequency - Transition	100MHz
Supplier Device Package	TO-236AB
Grade	-
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	65 V
Power - Max	250 mW
Qualification	-