BC856B/DG/B3,215
TRANS PNP 65V 0.1A TO236ABManufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. BC856B-DG-B3-215 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 65 V and a continuous collector current capability of 100 mA. The transistor exhibits a minimum DC current gain (hFE) of 125 at 2 mA collector current and 5 V collector-emitter voltage, with a transition frequency of 100 MHz. It is housed in a TO-236AB (SC-59) surface-mount package, delivering a maximum power dissipation of 250 mW. The device operates at temperatures up to 150°C (TJ) and is supplied in tape and reel packaging. This component finds application in industries such as consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-236AB |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 250 mW |
| Qualification | - |
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