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BC847CW/DG/B2,115

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BC847CW/DG/B2,115

TRANS NPN 45V 0.1A SOT323

Manufacturer: Nexperia USA Inc.

Categories: Single Bipolar Transistors

Quality Control: Learn More

Nexperia USA Inc. NPN Bipolar Junction Transistor, model BC847CW-DG-B2-115. This device features a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. The minimum DC current gain (hFE) is specified as 420 at 2mA collector current and 5V collector-emitter voltage. It operates at a transition frequency of 100MHz and has a maximum power dissipation of 200mW. Designed for surface mounting, the transistor is housed in an SC-70, SOT-323 package. The Vce(sat) is a maximum of 400mV at 5mA base current and 100mA collector current. The collector cutoff current (ICBO) is a maximum of 15nA. The operating junction temperature range is up to 150°C. This component is supplied on tape and reel. It is suitable for applications in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA, 5V
Frequency - Transition100MHz
Supplier Device PackageSOT-323
Grade-
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max200 mW
Qualification-

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