BC847CW/DG/B2,115
TRANS NPN 45V 0.1A SOT323Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. NPN Bipolar Junction Transistor, model BC847CW-DG-B2-115. This device features a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. The minimum DC current gain (hFE) is specified as 420 at 2mA collector current and 5V collector-emitter voltage. It operates at a transition frequency of 100MHz and has a maximum power dissipation of 200mW. Designed for surface mounting, the transistor is housed in an SC-70, SOT-323 package. The Vce(sat) is a maximum of 400mV at 5mA base current and 100mA collector current. The collector cutoff current (ICBO) is a maximum of 15nA. The operating junction temperature range is up to 150°C. This component is supplied on tape and reel. It is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-323 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 200 mW |
| Qualification | - |
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