BC847CQCZ
TRANS 45V 0.1A DFN1412D-3Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia BC847CQCZ is a bipolar junction transistor (BJT) designed for high-reliability applications. This AEC-Q101 qualified component offers a 45V collector-emitter breakdown voltage and a maximum collector current of 100mA. The BC847CQCZ features a high DC current gain (hFE) of 420 minimum at 2mA, 5V, and a transition frequency of 100MHz. With a maximum power dissipation of 360mW, it is suitable for use in automotive and industrial electronics. The Vce saturation is specified at 400mV maximum for 5mA base current and 100mA collector current. This device is provided in a DFN1412D-3 surface-mount package with wettable flanks, supplied on tape and reel. The operational temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | DFN1412D-3 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 360 mW |
| Qualification | AEC-Q101 |
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