BC847CQBZ
TRANS NPN 45V 0.1A DFN1110D-3Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. BC847CQBZ is an NPN bipolar junction transistor from the BC847xQB series. This AEC-Q101 qualified component offers a collector-emitter breakdown voltage of 45V and a continuous collector current handling capability of 100mA. It features a transition frequency of 100MHz and a maximum power dissipation of 340mW. Designed for surface mounting with wettable flanks, it is supplied in a DFN1110D-3 package. Key parameters include a saturation voltage of 400mV (max) at 5mA base current and 100mA collector current, and a minimum DC current gain (hFE) of 420 at 2mA collector current and 5V collector-emitter voltage. This device is suitable for applications within the automotive industry.
Additional Information
Series: BC847xQBRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | DFN1110D-3 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 340 mW |
| Qualification | AEC-Q101 |