BC847C/DG/B3,235
TRANS NPN 45V 0.1A TO236ABManufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia BC847C-DG-B3-235 is a surface-mount NPN bipolar junction transistor (BJT) packaged in a TO-236AB (SOT-23) form factor. This component offers a collector-emitter breakdown voltage of 45V and a maximum continuous collector current (Ic) of 100mA. It features a minimum DC current gain (hFE) of 420 at 2mA collector current and 5V Vce, with a transition frequency of 100MHz. The maximum power dissipation for this device is 250mW, and it operates at junction temperatures up to 150°C. The collector cutoff current (ICBO) is a maximum of 15nA. This transistor is commonly utilized in general-purpose amplification and switching applications across various electronic systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-236AB |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
| Qualification | - |