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BC847C/DG/B3,235

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BC847C/DG/B3,235

TRANS NPN 45V 0.1A TO236AB

Manufacturer: Nexperia USA Inc.

Categories: Single Bipolar Transistors

Quality Control: Learn More

Nexperia BC847C-DG-B3-235 is a surface-mount NPN bipolar junction transistor (BJT) packaged in a TO-236AB (SOT-23) form factor. This component offers a collector-emitter breakdown voltage of 45V and a maximum continuous collector current (Ic) of 100mA. It features a minimum DC current gain (hFE) of 420 at 2mA collector current and 5V Vce, with a transition frequency of 100MHz. The maximum power dissipation for this device is 250mW, and it operates at junction temperatures up to 150°C. The collector cutoff current (ICBO) is a maximum of 15nA. This transistor is commonly utilized in general-purpose amplification and switching applications across various electronic systems. The device is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA, 5V
Frequency - Transition100MHz
Supplier Device PackageTO-236AB
Grade-
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max250 mW
Qualification-

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