BC847C/DG/B3,215
TRANS NPN 45V 0.1A TO236ABManufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. BC847C-DG-B3-215 is an NPN bipolar junction transistor designed for surface mount applications. This component features a 45V collector-emitter breakdown voltage and a maximum collector current of 100mA. Its DC current gain (hFE) is specified at a minimum of 420 at 2mA collector current and 5V collector-emitter voltage. The transition frequency is 100MHz, and it offers a power dissipation of 250mW. The device is housed in a TO-236AB package, also known as SC-59 or SOT-23-3, and is supplied on a tape and reel. Applications for this transistor include general-purpose amplification and switching in consumer electronics, industrial control systems, and telecommunications infrastructure. The collector cutoff current (ICBO) is a maximum of 15nA, and Vce saturation is 400mV at 5mA base current and 100mA collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-236AB |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
| Qualification | - |
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