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BC847BQCZ

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BC847BQCZ

TRANS 45V 0.1A DFN1412D-3

Manufacturer: Nexperia USA Inc.

Categories: Single Bipolar Transistors

Quality Control: Learn More

Nexperia USA Inc. BC847BQCZ is a bipolar junction transistor (BJT) designed for surface-mount applications. This NPN transistor features a collector-emitter breakdown voltage (Vce) of 45V and a maximum collector current (Ic) of 100mA. With a transition frequency (fT) of 100MHz and a maximum power dissipation of 360mW, it is suitable for general-purpose amplification and switching in automotive environments, meeting AEC-Q101 qualification. The device exhibits a minimum DC current gain (hFE) of 200 at 2mA, 5V, and a collector cutoff current (ICBO) of 15nA. Saturation voltage (Vce(sat)) is a maximum of 400mV at 5mA base current and 100mA collector current. Supplied in a DFN1412D-3 package with wettable flanks, it is delivered on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-XDFN Exposed Pad
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition100MHz
Supplier Device PackageDFN1412D-3
GradeAutomotive
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max360 mW
QualificationAEC-Q101

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