BC847B/SNR
TRANS NPN 45V 0.1A TO236ABManufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia Bipolar Transistor, NPN, BC847B-SNR. This component features a collector-emitter breakdown voltage of 45 V and a continuous collector current (Ic) of 100 mA. With a transition frequency (fT) of 100 MHz and a maximum power dissipation of 250 mW, it is suitable for general-purpose amplification and switching applications. The DC current gain (hFE) is a minimum of 200 at 2 mA collector current and 5 V collector-emitter voltage. The device is packaged in a TO-236AB (SC-59) surface mount configuration, supplied on tape and reel. Its low saturation voltage of 400 mV at 5 mA base current and 100 mA collector current ensures efficient operation. Industries utilizing this component include automotive and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-236AB |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
| Qualification | - |
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