BC846BW/DG/B2,115
TRANS NPN 65V 0.1A SOT323Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. BC846BW-DG-B2-115 is an NPN bipolar junction transistor from the BC846xW series. This device features a collector-emitter breakdown voltage of 65 V and a maximum continuous collector current of 100 mA. With a transition frequency of 100 MHz and a maximum power dissipation of 200 mW, it is suitable for general-purpose amplification and switching applications. The DC current gain (hFE) is a minimum of 200 at 2 mA collector current and 5 V collector-emitter voltage. The transistor is housed in a compact SOT-323 (SC-70) surface-mount package and operates within a temperature range of -55°C to 150°C. This component is commonly found in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: BC846xWRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 200 mW |
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