BC817-25QCZ
TRANS NPN 45V 0.5A DFN1412D-3Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. presents the BC817-25QCZ, an NPN bipolar junction transistor from the BC817QC series. This SOT-1118D (DFN1412D-3) packaged device offers a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 500mA. Key electrical parameters include a DC current gain (hFE) of at least 160 at 100mA and 1V, and a transition frequency of 100MHz. The device features a maximum power dissipation of 380mW and an operating junction temperature of 150°C. Its DFN1412D-3 package includes wettable flanks for enhanced solder joint reliability, making it suitable for applications in consumer electronics and industrial control systems. The BC817-25QCZ is supplied on tape and reel.
Additional Information
Series: BC817QCRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | DFN1412D-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 380 mW |
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