2PB1219AQ,135
TRANS PNP 50V 0.5A SOT323Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. PNP bipolar junction transistor, part number 2PB1219AQ-135. This AEC-Q101 qualified component is designed for automotive applications, offering a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. It features a transition frequency of 100MHz and a power dissipation of 200mW. The device is supplied in a SOT-323 (SC-70) surface mount package, presented on tape and reel. Key parameters include a minimum DC current gain (hFE) of 85 at 150mA and 10V, and a maximum Vce(sat) of 600mV at 30mA and 300mA. The collector cutoff current (ICBO) is a maximum of 100nA. This device is suitable for use in demanding automotive electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 150mA, 10V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-323 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Qualification | AEC-Q101 |
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