PMGD370XN,115
MOSFET 2N-CH 30V 0.74A 6TSSOPManufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ MOSFET array, part number PMGD370XN-115, features a dual 2-channel configuration with a 30V drain-source voltage (Vdss) and 740mA continuous drain current (Id) at 25°C. This device utilizes TrenchMOS technology, offering a low Rds(on) of 440mOhm at 200mA and 4.5V Vgs. The logic-level gate characteristic, with a Vgs(th) of 1.5V at 250µA, is suitable for lower voltage drive applications. With a maximum power dissipation of 410mW and a gate charge (Qg) of 0.65nC at 4.5V, this MOSFET array is designed for efficient switching. The 6-TSSOP, SC-88, SOT-363 package is suitable for surface mounting. Typical applications include power management in consumer electronics and industrial control systems. The operating temperature range is -55°C to 150°C (TJ), and it is supplied on tape and reel.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 410mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 740mA |
| Input Capacitance (Ciss) (Max) @ Vds | 37pF @ 25V |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 200mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.65nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSSOP |
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