PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOPManufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Nexperia USA Inc. TrenchMOS™ PMGD290XN-115 is a dual N-channel MOSFET array designed for surface mount applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 860mA at 25°C. With a maximum power dissipation of 410mW and a low on-resistance of 350mOhm at 200mA and 4.5V Vgs, it offers efficient switching performance. The logic level gate allows for direct drive from low-voltage microcontrollers. Key parameters include a gate charge of 0.72nC (max) at 4.5V and input capacitance of 34pF (max) at 20V. Packaged in a 6-TSSOP, this device is suitable for use in consumer electronics, portable devices, and general-purpose switching applications within an operating temperature range of -55°C to 150°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 410mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 860mA |
| Input Capacitance (Ciss) (Max) @ Vds | 34pF @ 20V |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 200mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.72nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSSOP |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
BUK9611-80E,118
MOSFET N-CH 80V 75A D2PAK
