PMDT670UPE,115
MOSFET 2P-CH 20V 0.55A SOT666Manufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Nexperia USA Inc. TrenchMOS™ PMDT670UPE-115 is a dual P-channel MOSFET array designed for automotive applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 550mA at 25°C. With a low Rds(on) of 850mOhm at 400mA and 4.5V, it offers efficient switching. The logic-level gate feature simplifies driving requirements. Packaged in a SOT-666, this AEC-Q101 qualified device is supplied on tape and reel. Its low power dissipation of 330mW makes it suitable for space-constrained designs in automotive systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 330mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 550mA |
| Input Capacitance (Ciss) (Max) @ Vds | 87pF @ 10V |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 400mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.14nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Supplier Device Package | SOT-666 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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