PMDT290UCE,115
MOSFET N/P-CH 20V 0.8A SOT666Manufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
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Nexperia USA Inc. TrenchMOS™ PMDT290UCE-115 is a complementary pair of N-channel and P-channel MOSFETs in a SOT-666 package. This automotive-grade device offers a 20V drain-source voltage with continuous drain currents of 800mA for the N-channel and 550mA for the P-channel at 25°C. Key electrical parameters include a maximum on-resistance of 380mOhm at 500mA and 4.5V Vgs, and a logic-level gate feature. Input capacitance (Ciss) is a maximum of 83pF at 10V Vds, with a gate charge (Qg) of 0.68nC at 4.5V Vgs. The device dissipates a maximum of 500mW and operates across a temperature range of -55°C to 150°C. This component is utilized in automotive applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 800mA, 550mA |
| Input Capacitance (Ciss) (Max) @ Vds | 83pF @ 10V |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 500mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | SOT-666 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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