PHN210T,118
MOSFET 2N-CH 30V 8SOManufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Nexperia USA Inc. PHN210T-118 is a TrenchMOS™ MOSFET array featuring two N-channel transistors in a single 8-SOIC package. This surface mount device offers a Drain to Source Voltage (Vdss) of 30V and a maximum power dissipation of 2W. With a low Rds On of 100mOhm at 2.2A and 10V, and a logic level gate, it is suitable for efficient switching applications. The device exhibits a gate charge of 6nC and input capacitance of 250pF at the specified voltages. Operating temperature ranges from -65°C to 150°C. This component is commonly utilized in automotive, industrial, and consumer electronics power management designs. Packaged in Tape & Reel (TR).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 20V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | 8-SO |
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