PHKD6N02LT,518
MOSFET 2N-CH 20V 10.9A 8SOManufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ PHKD6N02LT-518 is a 20V, 2-channel N-channel MOSFET array in an 8-SOIC package. This logic-level gate device offers a continuous drain current of 10.9A at 25°C and a low on-resistance of 20mOhm maximum at 3A, 5V. Featuring a maximum power dissipation of 4.17W, it is suitable for applications requiring efficient switching and power management. Key parameters include a gate threshold voltage of 1.5V at 250µA, input capacitance of 950pF at 10V, and gate charge of 15.3nC at 5V. The PHKD6N02LT-518 is mounted via surface mount technology and operates within a temperature range of -55°C to 150°C. It is supplied on tape and reel. This component finds application in automotive and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 4.17W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 3A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 15.3nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SO |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
