PHKD3NQ10T,518
MOSFET 2N-CH 100V 3A 8SOManufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Nexperia USA Inc. PHKD3NQ10T-518 is a TrenchMOS™ MOSFET array featuring two independent N-channel devices in a 8-SOIC package. This component offers a continuous drain current (Id) of 3A and a drain-source voltage (Vdss) of 100V. The device is designed with a logic level gate, a maximum gate charge (Qg) of 21nC at 10V, and a maximum input capacitance (Ciss) of 633pF at 20V. The on-resistance (Rds On) is 90mOhm maximum at 1.5A and 10V. With a maximum power dissipation of 2W, it is suitable for surface mount applications and operates within a temperature range of -65°C to 150°C. This MOSFET array is commonly utilized in power management, automotive, and industrial control applications. The PHKD3NQ10T-518 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 633pF @ 20V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-SO |
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