PHKD13N03LT,118
MOSFET 2N-CH 30V 10.4A 8SOManufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
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Nexperia USA Inc. TrenchMOS™ PHKD13N03LT-118 is a dual 2-channel N-channel MOSFET array designed for high-efficiency switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 10.4A at 25°C. The low on-resistance of 20mOhm at 8A and 10V (Vgs) minimizes conduction losses, while the logic-level gate functionality simplifies drive requirements. With a maximum power dissipation of 3.57W, it is suitable for power management in automotive, industrial, and consumer electronics. The PHKD13N03LT-118 is housed in an 8-SOIC package, mounted via surface mount technology, and supplied on tape and reel. Key parameters include a gate charge (Qg) of 10.7nC at 5V and input capacitance (Ciss) of 752pF at 15V. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.57W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 752pF @ 15V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10.7nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
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