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PHC2300,118

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PHC2300,118

MOSFET N/P-CH 300V 0.34A 8SO

Manufacturer: Nexperia USA Inc.

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Nexperia USA Inc. PHC2300-118 is a MOSFET Array featuring both N-channel and P-channel configurations. This component is rated for a Drain-to-Source Voltage (Vdss) of 300V and offers continuous drain current capabilities of 340mA for the N-channel and 235mA for the P-channel, both specified at 25°C. The device has a maximum power dissipation of 1.6W and an Rds On of 6 Ohms at 170mA and 10V. Key parameters include a Gate Charge (Qg) of 6.24nC (Max) at 10V and an Input Capacitance (Ciss) of 102pF (Max) at 50V. The threshold voltage (Vgs(th)) is a maximum of 2V at 1mA. Supplied in an 8-SOIC package, this surface-mount component is designed for operation across a temperature range of -55°C to 150°C. It is commonly utilized in power management, industrial automation, and consumer electronics applications. The PHC2300-118 is provided in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.6W
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C340mA, 235mA
Input Capacitance (Ciss) (Max) @ Vds102pF @ 50V
Rds On (Max) @ Id, Vgs6Ohm @ 170mA, 10V
Gate Charge (Qg) (Max) @ Vgs6.24nC @ 10V
FET Feature-
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device Package8-SO

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