NX3020NAKV,115
MOSFET 2N-CH 30V 0.2A SOT666Manufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
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Nexperia USA Inc. NX3020NAKV-115 is a dual N-channel MOSFET array designed for surface mount applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 200mA at 25°C. The device offers a low gate charge (Qg) of 0.44nC at 4.5V and an input capacitance (Ciss) of 13pF at 10V. With a maximum power dissipation of 375mW and an Rds On of 4.5 Ohms at 100mA and 10V, it is suitable for logic-level gate applications. The MOSFET array is housed in a SOT-666 package and operates within a temperature range of -55°C to 150°C. This component is utilized in industries such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 375mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 200mA |
| Input Capacitance (Ciss) (Max) @ Vds | 13pF @ 10V |
| Rds On (Max) @ Id, Vgs | 4.5Ohm @ 100mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.44nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SOT-666 |
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