NX3008CBKV,115
MOSFET N/P-CH 30V 0.4A SOT666Manufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
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Nexperia USA Inc. TrenchMOS™ NX3008CBKV-115 is a MOSFET array featuring both N-channel and P-channel devices within a SOT-666 package. This component offers a 30V drain-to-source voltage rating. The continuous drain current (Id) at 25°C is specified as 400mA for the N-channel and 220mA for the P-channel. Key electrical characteristics include a maximum on-resistance (Rds On) of 1.4 Ohms at 350mA and 4.5V for the N-channel, and a logic-level gate feature suitable for low-voltage control applications. Gate charge (Qg) is a maximum of 0.68nC at 4.5V, and input capacitance (Ciss) is up to 50pF at 15V. Rated at 500mW maximum power dissipation, this device operates across a temperature range of -55°C to 150°C. The NX3008CBKV-115 is AEC-Q101 qualified, making it suitable for automotive applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 400mA, 220mA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 15V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 350mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | SOT-666 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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