NX1029X,115
MOSFET N/P-CH 60V 0.33A SOT666Manufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
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Nexperia USA Inc. TrenchMOS™ NX1029X-115 is a MOSFET array featuring both N-channel and P-channel devices within a SOT-666 package. This AEC-Q101 qualified component is designed for automotive applications. The N-channel MOSFET offers a continuous drain current of 330mA at 25°C with a drain-to-source voltage (Vdss) of 60V, while the P-channel MOSFET provides 170mA at 50V Vdss. Both devices exhibit a logic-level gate feature. The Rds On is specified at a maximum of 7.5 Ohms for the N-channel device at 100mA and 10V Vgs. Input capacitance (Ciss) is 36pF maximum at 25V Vds, with a gate charge (Qg) of 0.35nC maximum at 5V Vgs. The Power Dissipation (Pd) is 500mW, and the device operates across a temperature range of -55°C to 150°C (TJ). This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 60V, 50V |
| Current - Continuous Drain (Id) @ 25°C | 330mA, 170mA |
| Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 25V |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 100mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | SOT-666 |
| Grade | Automotive |
| Qualification | AEC-Q101 |