BUK9MTT-65PBB,518
MOSFET 2N-CH 65V 3.8A 20SOManufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Nexperia USA Inc. TrenchPLUS series MOSFET array, part number BUK9MTT-65PBB-518. This dual N-channel device features a Drain-Source Voltage (Vdss) of 65V and a continuous Drain Current (Id) of 3.8A at 25°C (Tc). With a maximum power dissipation of 3.15W (Tc), it offers a low Rds(on) of 90.4mOhm at 3A, 10V. The logic-level gate is driven by a Vgs(th) of 2V (Max) at 1mA, with a Gate Charge (Qg) of 6.3nC maximum at 5V. Input capacitance (Ciss) is 535pF maximum at 25V. This MOSFET array is housed in a 20-SOIC (0.295", 7.50mm Width) package, suitable for surface mounting, and supplied on tape and reel. Operating temperature range is -55°C to 150°C (TJ). Applications include automotive and industrial power management.
Additional Information
Series: TrenchPLUSRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 20-SOIC (0.295"", 7.50mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.15W (Tc) |
| Drain to Source Voltage (Vdss) | 65V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 535pF @ 25V |
| Rds On (Max) @ Id, Vgs | 90.4mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 20-SO |
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