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BUK9MRR-65PKK,518

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BUK9MRR-65PKK,518

MOSFET 2N-CH 65V 4.8A 20SO

Manufacturer: Nexperia USA Inc.

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Nexperia USA Inc. TrenchPLUS series BUK9MRR-65PKK-518 is a 2 N-Channel MOSFET array designed for surface mount applications. This component features a Drain to Source Voltage (Vdss) of 65V and a continuous Drain current (Id) of 4.8A at 25°C (Tc), with a maximum power dissipation of 3.2W (Tc). The Rds On (Max) is 60.7mOhm at 3A and 10V, and it utilizes a logic level gate with a Gate Charge (Qg) of 8.8nC at 5V. Input capacitance (Ciss) is a maximum of 712pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ). Packaged in a 20-SOIC (0.295", 7.50mm width) and supplied on tape and reel (TR), this MOSFET array is suitable for automotive and industrial applications.

Additional Information

Series: TrenchPLUSRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case20-SOIC (0.295"", 7.50mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max3.2W (Tc)
Drain to Source Voltage (Vdss)65V
Current - Continuous Drain (Id) @ 25°C4.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds712pF @ 25V
Rds On (Max) @ Id, Vgs60.7mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs8.8nC @ 5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device Package20-SO

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