BUK9MNN-65PKK,518
MOSFET 2N-CH 65V 7.1A 20SOManufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
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The Nexperia USA Inc. TrenchPLUS series BUK9MNN-65PKK-518 is a 65V, 2-N-Channel MOSFET array designed for robust performance. This component features a continuous drain current capability of 7.1A (Tc) and a maximum power dissipation of 3.57W (Tc). The device is housed in a 20-SOIC package, facilitating surface mounting. Key electrical characteristics include a drain-to-source voltage (Vdss) of 65V, a low Rds(on) of 32.8mOhm at 5A and 10V, and a logic-level gate for enhanced drive flexibility. Input capacitance (Ciss) is specified at 1180pF (max) at 25V, with a gate charge (Qg) of 15nC (max) at 5V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET array is commonly utilized in automotive and industrial applications requiring efficient power switching.
Additional Information
Series: TrenchPLUSRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 20-SOIC (0.295"", 7.50mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.57W (Tc) |
| Drain to Source Voltage (Vdss) | 65V |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1180pF @ 25V |
| Rds On (Max) @ Id, Vgs | 32.8mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 20-SO |
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