BUK9MHH-65PNN,518
MOSFET 2N-CH 65V 15A 20SOManufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Nexperia's BUK9MHH-65PNN-518 is a TrenchPLUS series dual N-channel MOSFET array packaged in a 20-SOIC (0.295", 7.50mm Width) surface mount configuration. This device features a Drain-to-Source Voltage (Vdss) of 65V and a continuous drain current (Id) of 15A at 25°C (Tc). Optimized for efficiency, it exhibits a maximum Rds On of 10.6mOhm at 10A, 10V, and a typical Gate Charge (Qg) of 44.6nC at 5V, indicating its suitability for high-frequency switching applications. The MOSFET array operates within a temperature range of -55°C to 150°C (TJ) with a maximum power dissipation of 5W (Tc). This component is commonly utilized in automotive and industrial power management solutions. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchPLUSRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 20-SOIC (0.295"", 7.50mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 5W (Tc) |
| Drain to Source Voltage (Vdss) | 65V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 3643pF @ 25V |
| Rds On (Max) @ Id, Vgs | 10.6mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 44.6nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 20-SO |
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