BUK9MGP-55PTS,518
MOSFET 2N-CH 55V 16.9A 20SOManufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Nexperia USA Inc. TrenchPLUS MOSFET array, part number BUK9MGP-55PTS-518, features two N-channel MOSFETs with a 55V drain-source voltage. This device offers a continuous drain current of 16.9A (Tc) for one channel and 9.16A (Tc) for the other, with maximum power dissipation of 5.2W (Tc) and 3.9W (Tc) respectively. The BUK9MGP-55PTS-518 is designed for surface mounting in a 20-SOIC package. Key parameters include a maximum gate charge of 54nC and 23nC at 5V, and input capacitance of 5178pF and 2315pF at 25V. On-resistance is specified at 9mOhm @ 10A, 10V and 22.6mOhm @ 5A, 10V. The component operates across a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in automotive and industrial sectors.
Additional Information
Series: TrenchPLUSRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 20-SOIC (0.295"", 7.50mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 5.2W (Tc), 3.9W (Tc) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 16.9A (Tc), 9.16A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 5178pF @ 25V, 2315pF @ 25V |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 10A, 10V, 22.6mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 5V, 23nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 20-SO |
Request a Quote
Clients Also Buy
BUK714R1-40BT,118
MOSFET N-CH 40V 75A SOT426
BUK794R1-40BT,127
MOSFET N-CH 40V 75A TO220-5
BUK9C10-55BIT/A,11
MOSFET N-CH 55V 75A D2PAK-7
