BUK9K35-60E,115
MOSFET 2N-CH 60V 22A LFPAK56DManufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ MOSFET array, part number BUK9K35-60E-115, features two N-channel devices in a 60V configuration. This component offers a continuous drain current (Id) of 22A at 25°C and a maximum power dissipation of 38W. With a low Rds(on) of 32mOhm at 5A and 10V, and a logic level gate feature, it is suitable for demanding applications. The BUK9K35-60E-115 is housed in a surface mount LFPAK56D package (SOT-1205) and is AEC-Q101 qualified, indicating its suitability for the automotive industry. Key electrical parameters include a gate charge (Qg) of 14.2nC at 10V and input capacitance (Ciss) of 1081pF at 25V. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 38W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 22A |
| Input Capacitance (Ciss) (Max) @ Vds | 1081pF @ 25V |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14.2nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | LFPAK56D |
| Grade | Automotive |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
