2N7002PV,115
MOSFET 2N-CH 60V 0.35A SOT666Manufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
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Nexperia USA Inc. 2N7002PV-115 is a 60V N-channel MOSFET array in a SOT-666 package. This device features a continuous drain current of 350mA at 25°C and a maximum power dissipation of 330mW. With a low Gate Charge (Qg) of 0.8nC at 4.5V and a Rds On of 1.6 Ohms at 500mA and 10V, it is suitable for applications requiring efficient switching. The component is AEC-Q101 qualified, indicating its suitability for the automotive industry. It also includes a logic-level gate feature and operates at temperatures up to 150°C. The 2N7002PV-115 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 330mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 350mA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | SOT-666 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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