2N7002BKV,115
MOSFET 2N-CH 60V 340MA SOT666Manufacturer: Nexperia USA Inc.
Categories: FET, MOSFET Arrays
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Nexperia's 2N7002BKV-115 is a TrenchMOS™ dual N-channel MOSFET array housed in a SOT-666 package. This AEC-Q101 qualified component features a 60V drain-source voltage rating and a continuous drain current capability of 340mA at 25°C. With a maximum power dissipation of 350mW and an Rds(On) of 1.6 Ohms at 500mA and 10V, it offers efficient switching. The logic-level gate design, characterized by a gate charge of 0.6nC at 4.5V and a threshold voltage of 2.1V at 250µA, facilitates low-voltage drive applications. Input capacitance is rated at a maximum of 50pF at 10V. This device is suitable for automotive applications, operating across an extended temperature range up to 150°C. The component is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 350mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 340mA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | SOT-666 |
| Grade | Automotive |
| Qualification | AEC-Q101 |