PMBT3906VS,115
TRANS 2PNP 40V 0.2A SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays
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Nexperia USA Inc. PMBT3906VS-115 is a dual PNP bipolar junction transistor array designed for high-performance applications. Featuring a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA, this device is suitable for switching and amplification tasks. The transistor array boasts a transition frequency of 250MHz, enabling rapid signal processing. With a maximum power dissipation of 360mW and an operating temperature range up to 150°C, it ensures reliable performance in demanding environments. The SOT-666 package, a surface-mount configuration, is ideal for space-constrained designs. Qualified to AEC-Q101 standards, this component is utilized in automotive systems and general-purpose electronics. Key parameters include a minimum DC current gain (hFE) of 100 at 10mA and 1V, and a Vce saturation of 400mV at 5mA/50mA. The collector cutoff current (ICBO) is a maximum of 50nA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 360mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | SOT-666 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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