PEMT1,115
TRANS 2PNP 40V 0.1A SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays
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Nexperia USA Inc. presents the PEMT1-115, a bipolar transistor array featuring two PNP transistors in a SOT-666 package. This device offers a collector-emitter breakdown voltage of 40V and a maximum collector current of 100mA. With a transition frequency of 100MHz and a power dissipation of 300mW, it is suitable for applications requiring compact, high-performance switching and amplification. The minimum DC current gain (hFE) is 120 at 1mA and 6V, with a collector cutoff current of 100nA. The saturation voltage (Vce) is a maximum of 200mV at 5mA base current and 50mA collector current. This component is designed for surface mounting and operates at temperatures up to 150°C. It finds application in consumer electronics, industrial automation, and automotive systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-666 |
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