PBSS4350SS,115
TRANS 2NPN 50V 2.7A 8SOManufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays
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Nexperia USA Inc. presents the PBSS4350SS-115, a dual NPN bipolar junction transistor array designed for demanding applications. This 8-SOIC package component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of up to 2.7A. Featuring a maximum power dissipation of 2W and an operating junction temperature of 150°C, it ensures robust performance in challenging environments. The PBSS4350SS-115 exhibits a minimum DC current gain (hFE) of 300 at 1A and 2V, with a Vce(sat) of 340mV at 270mA and 2.7A. This device is suitable for power management and general-purpose switching in automotive and industrial sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 2W |
| Current - Collector (Ic) (Max) | 2.7A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 340mV @ 270mA, 2.7A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | 8-SO |
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