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PBSS4350SPN,115

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PBSS4350SPN,115

TRANS NPN/PNP 50V 2.7A 8SO

Manufacturer: Nexperia USA Inc.

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Nexperia USA Inc. PBSS4350SPN-115 is a surface mount bipolar transistor array featuring one NPN and one PNP transistor. This 8-SOIC packaged device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 2.7A. The NPN transistor exhibits a minimum DC current gain (hFE) of 300 at 1A and 2V, with a Vce saturation of 340mV at 270mA and 2.7A. The PNP transistor provides a minimum hFE of 180 at 1A and 2V, and a Vce saturation of 370mV at 270mA and 2.7A. The component has a maximum power dissipation of 750mW and an operating junction temperature of 150°C. It is supplied in Tape & Reel packaging and is utilized in automotive and industrial applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP
Operating Temperature150°C (TJ)
Power - Max750mW
Current - Collector (Ic) (Max)2.7A
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1A, 2V / 180 @ 1A, 2V
Frequency - Transition-
Supplier Device Package8-SO

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