PBSS4041SN,115
TRANS 2NPN 60V 6.7A 8SOManufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays
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Nexperia USA Inc. PBSS4041SN-115 is a dual NPN bipolar junction transistor array designed for high-current applications. This device features a 60V collector-emitter breakdown voltage and a continuous collector current capability of 6.7A. With a transition frequency of 130MHz and a maximum power dissipation of 2.3W, it is suitable for demanding switching and amplification tasks. The minimum DC current gain (hFE) is 150 at 4A and 2V. The transistor array is housed in an 8-SOIC package (0.154" width) suitable for surface mounting and is supplied on tape and reel. Operating temperature range is up to 150°C (TJ). Saturation voltage (Vce) is a maximum of 350mV at 350mA base current and 7A collector current. This component finds application in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 2.3W |
| Current - Collector (Ic) (Max) | 6.7A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 350mA, 7A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 4A, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | 8-SO |
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