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PBSS4032SP,115

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PBSS4032SP,115

TRANS 2PNP 30V 4.8A 8SO

Manufacturer: Nexperia USA Inc.

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Nexperia USA Inc. offers the PBSS4032SP-115, a dual PNP bipolar junction transistor (BJT) array. This surface mount component, housed in an 8-SOIC package, features a collector-emitter breakdown voltage of 30V and a maximum collector current (Ic) of 4.8A. It provides a minimum DC current gain (hFE) of 150 at 2A and 2V, with a transition frequency of 115MHz. The device has a maximum power dissipation of 2.3W and an operating junction temperature of 150°C. Applications include power management and motor control systems. This part is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature150°C (TJ)
Power - Max2.3W
Current - Collector (Ic) (Max)4.8A
Voltage - Collector Emitter Breakdown (Max)30V
Vce Saturation (Max) @ Ib, Ic510mV @ 250mA, 5A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 2A, 2V
Frequency - Transition115MHz
Supplier Device Package8-SO

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