PBSS4032SN,115
TRANS 2NPN 30V 5.7A 8SOManufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays
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Nexperia USA Inc. PBSS4032SN-115 is a dual NPN bipolar junction transistor (BJT) array housed in an 8-SO package. This surface-mount device offers a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 5.7A. It features a transition frequency of 140MHz and a minimum DC current gain (hFE) of 250 at 2A and 2V. The device dissipates a maximum power of 2.3W and operates at junction temperatures up to 150°C. Saturation voltage (Vce(sat)) is specified at a maximum of 450mV at 300mA collector current and 6A collector current. This transistor array is utilized in various applications including power switching, motor control, and general-purpose amplification within the automotive and industrial sectors. Packaging is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 2.3W |
| Current - Collector (Ic) (Max) | 5.7A |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 300mA, 6A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 2A, 2V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | 8-SO |
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