PBSS2515VPN,115
TRANS NPN/PNP 15V 0.5A SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays
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Nexperia USA Inc. PBSS2515VPN-115 is a bipolar transistor array featuring a complementary NPN and PNP configuration. This device offers a collector current capability of up to 500mA and a collector-emitter breakdown voltage of 15V. The NPN transistor provides a transition frequency of 420MHz, while the PNP transistor achieves 280MHz. With a maximum power dissipation of 300mW and a maximum operating junction temperature of 150°C, it is suitable for demanding applications. The DC current gain (hFE) is a minimum of 150 at 100mA and 2V for the NPN, and 150 at 100mA and 2V for the PNP. Saturation voltage (Vce(sat)) is specified at a maximum of 250mV at 50mA collector current and 50mA base current. This component is provided in a SOT-666 surface mount package, delivered on cut tape. It finds application in various sectors including consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 100mA, 2V |
| Frequency - Transition | 420MHz, 280MHz |
| Supplier Device Package | SOT-666 |
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