BCM857BSHX
BCM857BSHXManufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays
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Nexperia USA Inc. Bipolar Transistor Array BCM857BSHX offers two independent PNP transistors in a single 6-TSSOP package. This array provides a collector current capability of up to 100mA with a collector-emitter breakdown voltage of 45V. Featuring a transition frequency of 100MHz and a maximum power dissipation of 270mW, it is suitable for applications requiring efficient switching and amplification. The device exhibits a typical DC current gain (hFE) of 200 at 2mA collector current. Operating temperature range extends to 175°C. This component finds application in various industrial and consumer electronics, including power management and signal conditioning circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | 175°C (TJ) |
| Power - Max | 270mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | 6-TSSOP |
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