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BCM857BSHF

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BCM857BSHF

BCM857BSHF

Manufacturer: Nexperia USA Inc.

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Nexperia USA Inc. BCM857BSHF is a bipolar transistor array featuring two PNP transistors in a 6-TSSOP package. This dual PNP configuration offers a collector current (Ic) up to 100mA and a collector-emitter breakdown voltage (Vce) of 45V. With a transition frequency of 100MHz and a maximum power dissipation of 270mW, it is suitable for applications requiring moderate switching speeds and power handling. The device exhibits a minimum DC current gain (hFE) of 200 at 2mA, 5V, and a low collector cutoff current (Icbo) of 15nA. The saturation voltage (Vce Sat) is a maximum of 300mV at 5mA, 100mA. Operating at an ambient temperature up to 175°C (TJ), this component finds application in various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature175°C (TJ)
Power - Max270mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition100MHz
Supplier Device Package6-TSSOP

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