BCM856BSHX
BCM856BSHXManufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays
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Nexperia USA Inc. BCM856BSHX is a dual PNP bipolar transistor array designed for high-performance applications. This component features a 65V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 175MHz, it is suitable for signal amplification and switching functions in various electronic systems. The device offers a minimum DC current gain (hFE) of 200 at 2mA and 5V. Packaged in a 6-TSSOP (SC-88, SOT-363) for surface mounting, it operates at a maximum junction temperature of 150°C and a power dissipation of 200mW. The BCM856BSHX is commonly utilized in industrial automation, consumer electronics, and communication infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 175MHz |
| Supplier Device Package | 6-TSSOP |
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