BCM856BSHF
BCM856BSHFManufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays
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Nexperia USA Inc. Bipolar Transistor Array, BCM856BSHF, features two PNP bipolar junction transistors in a 6-TSSOP package. This device offers a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. With a transition frequency of 175MHz and a minimum DC current gain (hFE) of 200 at 2mA and 5V, it is suitable for applications requiring moderate switching speeds and amplification. The array operates at a maximum junction temperature of 150°C and has a power dissipation of 200mW. The BCM856BSHF is commonly utilized in industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 175MHz |
| Supplier Device Package | 6-TSSOP |
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