BC857BV,115
TRANS 2PNP 45V 0.1A SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays
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Nexperia USA Inc. BC857BV-115 is a dual PNP bipolar junction transistor (BJT) array designed for surface mount applications. This component features a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. The device exhibits a minimum DC current gain (hFE) of 200 at 2mA and 5V, with a transition frequency of 100MHz. Power dissipation is rated at 200mW, and the collector cutoff current (ICBO) is a maximum of 15nA. The saturation voltage (Vce Sat) is specified at 400mV maximum for a base current of 5mA and collector current of 100mA. Supplied in a SOT-666 package on tape and reel, this transistor array is suitable for use in general-purpose amplification and switching circuits across various industrial and consumer electronics segments. Operating temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-666 |
| Grade | - |
| Qualification | - |
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