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BC856SHX

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BC856SHX

TRANS 2PNP 65V 0.1A 6TSSOP

Manufacturer: Nexperia USA Inc.

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Nexperia USA Inc. presents the BC856SHX, a dual PNP bipolar transistor array. This component features a collector current (Ic) of up to 100mA and a collector-emitter breakdown voltage of 65V. With a transition frequency of 100MHz and a maximum power dissipation of 270mW, it offers robust performance for demanding applications. The DC current gain (hFE) is a minimum of 110 at 2mA, 5V, and saturation voltage (Vce Sat) is a maximum of 300mV at 5mA, 100mA. The device exhibits a collector cutoff current (ICBO) of 15nA (max). Operating at temperatures up to 175°C (TJ), the BC856SHX is supplied in a 6-TSSOP package, suitable for surface mounting. This transistor array finds application in consumer electronics and industrial automation.

Additional Information

Series: BC856RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature175°C (TJ)
Power - Max270mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)65V
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA, 5V
Frequency - Transition100MHz
Supplier Device Package6-TSSOP
Grade-
Qualification-

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