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BC856BS/DG/B2,115

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BC856BS/DG/B2,115

TRANS 2PNP 65V 0.1A 6TSSOP

Manufacturer: Nexperia USA Inc.

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Nexperia USA Inc. BC856BS-DG-B2-115 is a dual PNP bipolar junction transistor array within a 6-TSSOP package. This AEC-Q101 qualified component operates at a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. It features a transition frequency of 100MHz and a minimum DC current gain (hFE) of 200 @ 2mA, 5V. The device is rated for a maximum power dissipation of 300mW and can operate at junction temperatures up to 150°C. It is supplied in tape and reel packaging. This device is commonly utilized in automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature150°C (TJ)
Power - Max300mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)65V
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition100MHz
Supplier Device Package6-TSSOP
GradeAutomotive
QualificationAEC-Q101

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