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BC847BPN/DG/B2,115

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BC847BPN/DG/B2,115

TRANS GEN PURPOSE SC-88

Manufacturer: Nexperia USA Inc.

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Nexperia USA Inc. BC847BPN-DG-B2-115 is a bipolar transistor array featuring one NPN and one PNP transistor in a single 6-TSSOP (SC-88) package. This device offers a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. The DC current gain (hFE) is a minimum of 200 at 2mA collector current and 5V Vce. With a transition frequency of 100MHz and a maximum power dissipation of 400mW, it is suitable for general-purpose amplification and switching applications. The operating temperature range extends to 150°C (TJ). This component is commonly employed in consumer electronics, industrial automation, and telecommunications infrastructure. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP
Operating Temperature150°C (TJ)
Power - Max400mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition100MHz
Supplier Device Package6-TSSOP
Grade-
Qualification-

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